casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / MUN5236DW1T1G
codice articolo del costruttore | MUN5236DW1T1G |
---|---|
Numero di parte futuro | FT-MUN5236DW1T1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
MUN5236DW1T1G Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 100 kOhms |
Resistor - Emitter Base (R2) | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 250mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | SC-88/SC70-6/SOT-363 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5236DW1T1G Peso | Contattaci |
Numero parte di ricambio | MUN5236DW1T1G-FT |
NSBA123JDXV6T5G
ON Semiconductor
NSBA124XDXV6T1G
ON Semiconductor
NSVBA114EDXV6T1G
ON Semiconductor
NSVBA114YDXV6T1G
ON Semiconductor
NSVBC124XPDXV6T1G
ON Semiconductor
NSBC114TDXV6T1G
ON Semiconductor
EMD5DXV6T1
ON Semiconductor
EMD5DXV6T1G
ON Semiconductor
EMF5XV6T5
ON Semiconductor
NSBA113EDXV6T1
ON Semiconductor
AT40K40AL-1BQI
Microchip Technology
XC3S50-4PQ208C
Xilinx Inc.
A42MX36-1BGG272M
Microsemi Corporation
A3PE600-2PQ208
Microsemi Corporation
5SGSED6K3F40I4N
Intel
5SGXEA4H2F35I2LN
Intel
LFE2M70SE-6F900C
Lattice Semiconductor Corporation
LCMXO2-4000HC-6BG256I
Lattice Semiconductor Corporation
LFXP2-5E-6M132I
Lattice Semiconductor Corporation
EPF81188AQC240-4
Intel