casa / prodotti / Prodotti semiconduttori discreti / Transistor - FET, MOSFET - Array / APTMC120AM55CT1AG
codice articolo del costruttore | APTMC120AM55CT1AG |
---|---|
Numero di parte futuro | FT-APTMC120AM55CT1AG |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
APTMC120AM55CT1AG Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Tipo FET | 2 N-Channel (Half Bridge) |
Caratteristica FET | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Corrente - Scarico continuo (Id) @ 25 ° C | 55A (Tc) |
Rds On (Max) @ Id, Vgs | 49 mOhm @ 40A, 20V |
Vgs (th) (Max) @ Id | 2.2V @ 2mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 20V |
Capacità di ingresso (Ciss) (Max) @ Vds | 1900pF @ 1000V |
Potenza - Max | 250W |
temperatura di esercizio | -40°C ~ 150°C (TJ) |
Tipo di montaggio | Chassis Mount |
Pacchetto / caso | SP1 |
Pacchetto dispositivo fornitore | SP1 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
APTMC120AM55CT1AG Peso | Contattaci |
Numero parte di ricambio | APTMC120AM55CT1AG-FT |
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