casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / MUN5113DW1T1G
codice articolo del costruttore | MUN5113DW1T1G |
---|---|
Numero di parte futuro | FT-MUN5113DW1T1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
MUN5113DW1T1G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 250mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | SC-88/SC70-6/SOT-363 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5113DW1T1G Peso | Contattaci |
Numero parte di ricambio | MUN5113DW1T1G-FT |
NSVBC114YPDXV6T1G
ON Semiconductor
NSVBC144EPDXV6T1G
ON Semiconductor
NSBA123JDXV6T5G
ON Semiconductor
NSBA124XDXV6T1G
ON Semiconductor
NSVBA114EDXV6T1G
ON Semiconductor
NSVBA114YDXV6T1G
ON Semiconductor
NSVBC124XPDXV6T1G
ON Semiconductor
NSBC114TDXV6T1G
ON Semiconductor
EMD5DXV6T1
ON Semiconductor
EMD5DXV6T1G
ON Semiconductor
LCMXO2-2000ZE-3TG100I
Lattice Semiconductor Corporation
LCMXO640C-3T100C
Lattice Semiconductor Corporation
XC2VP4-6FGG256I
Xilinx Inc.
XCS10-3VQ100C
Xilinx Inc.
P1AFS1500-2FG484I
Microsemi Corporation
EP1K100FC256-2N
Intel
5SGSMD6K2F40I3LN
Intel
EP3SL200F1152I4L
Intel
EP1S30F780C7N
Intel
EP2S90F1020C5N
Intel