casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / EMG4T2R
codice articolo del costruttore | EMG4T2R |
---|---|
Numero di parte futuro | FT-EMG4T2R |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
EMG4T2R Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | - |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-SMD (5 Leads), Flat Lead |
Pacchetto dispositivo fornitore | EMT5 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMG4T2R Peso | Contattaci |
Numero parte di ricambio | EMG4T2R-FT |
RN4906,LF
Toshiba Semiconductor and Storage
RN4907(T5L,F,T)
Toshiba Semiconductor and Storage
RN4908(T5L,F,T)
Toshiba Semiconductor and Storage
RN4909(T5L,F,T)
Toshiba Semiconductor and Storage
RN4910(T5L,F,T)
Toshiba Semiconductor and Storage
RN4911(T5L,F,T)
Toshiba Semiconductor and Storage
RN4984(T5L,F,T)
Toshiba Semiconductor and Storage
RN4986(T5L,F,T)
Toshiba Semiconductor and Storage
RN4988(T5L,F,T)
Toshiba Semiconductor and Storage
RN4989(T5L,F,T)
Toshiba Semiconductor and Storage
LFE2-6E-5T144I
Lattice Semiconductor Corporation
M1A3P600-1FG484
Microsemi Corporation
M1AFS250-FG256
Microsemi Corporation
EP4CE75F23C7
Intel
5SEE9H40C4N
Intel
XC4044XL-1HQ208I
Xilinx Inc.
XC4VFX20-10FF672C
Xilinx Inc.
5CGXFC5C6F23I7N
Intel
EP20K160EQC240-2
Intel
EP4SGX230FF35C4N
Intel