casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / EMG4T2R
codice articolo del costruttore | EMG4T2R |
---|---|
Numero di parte futuro | FT-EMG4T2R |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
EMG4T2R Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | - |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-SMD (5 Leads), Flat Lead |
Pacchetto dispositivo fornitore | EMT5 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMG4T2R Peso | Contattaci |
Numero parte di ricambio | EMG4T2R-FT |
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