casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / EMD6FHAT2R
codice articolo del costruttore | EMD6FHAT2R |
---|---|
Numero di parte futuro | FT-EMD6FHAT2R |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
EMD6FHAT2R Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 500nA (ICBO) |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-563, SOT-666 |
Pacchetto dispositivo fornitore | EMT6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMD6FHAT2R Peso | Contattaci |
Numero parte di ricambio | EMD6FHAT2R-FT |
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