casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / RN4982,LF(CT
codice articolo del costruttore | RN4982,LF(CT |
---|---|
Numero di parte futuro | FT-RN4982,LF(CT |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
RN4982,LF(CT Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 100µA (ICBO) |
Frequenza - Transizione | 250MHz, 200MHz |
Potenza - Max | 200mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | US6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN4982,LF(CT Peso | Contattaci |
Numero parte di ricambio | RN4982,LF(CT-FT |
RN1962TE85LF
Toshiba Semiconductor and Storage
RN49A2,LF(CT
Toshiba Semiconductor and Storage
RN1673(TE85L,F)
Toshiba Semiconductor and Storage
RN1902FE,LF(CT
Toshiba Semiconductor and Storage
RN1904FE,LF(CT
Toshiba Semiconductor and Storage
RN1908FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1911FETE85LF
Toshiba Semiconductor and Storage
RN1966FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2903FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2904FE,LF
Toshiba Semiconductor and Storage
EP20K30ETC144-3N
Intel
XC3S1500-5FG320C
Xilinx Inc.
XC4VFX100-11FFG1517I
Xilinx Inc.
A42MX36-3PQ208
Microsemi Corporation
10M40DCF256I7G
Intel
EP4CE22F17C9LN
Intel
5SGSMD5H3F35I3N
Intel
XC7VX415T-2FFG1927C
Xilinx Inc.
LFX200EB-03F256I
Lattice Semiconductor Corporation
EP2AGX125EF35C6N
Intel