casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / RN4910,LF
codice articolo del costruttore | RN4910,LF |
---|---|
Numero di parte futuro | FT-RN4910,LF |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
RN4910,LF Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | 200MHz |
Potenza - Max | 200mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | US6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN4910,LF Peso | Contattaci |
Numero parte di ricambio | RN4910,LF-FT |
RN1908FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1911FETE85LF
Toshiba Semiconductor and Storage
RN1966FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2903FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2904FE,LF
Toshiba Semiconductor and Storage
RN2907FE,LF(CT
Toshiba Semiconductor and Storage
RN2908FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2909FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2910FE,LF(CT
Toshiba Semiconductor and Storage
RN4902FE,LF(CT
Toshiba Semiconductor and Storage
LCMXO2-640UHC-5TG144I
Lattice Semiconductor Corporation
A42MX36-1BGG272M
Microsemi Corporation
A54SX72A-1PQ208
Microsemi Corporation
ICE40UP5K-UWG30ITR
Lattice Semiconductor Corporation
LCMXO2-4000HC-5QN84I
Lattice Semiconductor Corporation
EPF8452ATC100-3N
Intel
EP20K60EFC144-3
Intel
5SGXMA9N3F45C2N
Intel
LFE3-70E-8FN484I
Lattice Semiconductor Corporation
10AX032E2F29I1SG
Intel