casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / UNR522600L
codice articolo del costruttore | UNR522600L |
---|---|
Numero di parte futuro | FT-UNR522600L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
UNR522600L Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 80mV @ 2.5mA, 50mA |
Corrente - Limite del collettore (max) | 1µA (ICBO) |
Frequenza - Transizione | 200MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-70, SOT-323 |
Pacchetto dispositivo fornitore | SMini3-G1 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
UNR522600L Peso | Contattaci |
Numero parte di ricambio | UNR522600L-FT |
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