casa / prodotti / Prodotti semiconduttori discreti / Tiristori - SCR / TS1220-600T
codice articolo del costruttore | TS1220-600T |
---|---|
Numero di parte futuro | FT-TS1220-600T |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
TS1220-600T Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Voltaggio - Off State | 600V |
Voltage - Gate Trigger (Vgt) (Max) | 800mV |
Corrente - Gate Trigger (Igt) (Max) | 200µA |
Voltage - On State (Vtm) (Max) | 1.6V |
Corrente - On State (It (AV)) (Max) | 8A |
Corrente - On State (It (RMS)) (Max) | 12A |
Corrente - Hold (Ih) (Max) | 5mA |
Corrente - Off Stato (max) | 5µA |
Corrente - Non Rep. Surge 50, 60Hz (Itsm) | 110A, 115A |
SCR Type | Sensitive Gate |
temperatura di esercizio | -40°C ~ 125°C |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-220-3 |
Pacchetto dispositivo fornitore | TO-220AB |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
TS1220-600T Peso | Contattaci |
Numero parte di ricambio | TS1220-600T-FT |
VS-ST1200C14K0P
Vishay Semiconductor Diodes Division
VS-ST1200C16K0
Vishay Semiconductor Diodes Division
VS-ST1200C16K0P
Vishay Semiconductor Diodes Division
VS-ST1200C16K1
Vishay Semiconductor Diodes Division
VS-ST1200C16K1L
Vishay Semiconductor Diodes Division
VS-ST1200C16K3P
Vishay Semiconductor Diodes Division
VS-ST1200C18K0
Vishay Semiconductor Diodes Division
VS-ST1200C18K0L
Vishay Semiconductor Diodes Division
VS-ST1200C18K0P
Vishay Semiconductor Diodes Division
VS-ST1200C18K1
Vishay Semiconductor Diodes Division
EP1K30TC144-1N
Intel
A1225A-PQG100I
Microsemi Corporation
LCMXO256C-3TN100I
Lattice Semiconductor Corporation
XA7S50-1FGGA484I
Xilinx Inc.
APA300-FG256I
Microsemi Corporation
AT6005-2AI
Microchip Technology
EP4CE10E22I7
Intel
LFEC1E-4Q208I
Lattice Semiconductor Corporation
10AX115S3F45I2SGE2
Intel
EP2AGX260FF35C5N
Intel