casa / prodotti / Prodotti semiconduttori discreti / Transistor - FET, MOSFET - Array / TPS1120DG4
codice articolo del costruttore | TPS1120DG4 |
---|---|
Numero di parte futuro | FT-TPS1120DG4 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
TPS1120DG4 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Tipo FET | 2 P-Channel (Dual) |
Caratteristica FET | Logic Level Gate |
Drain to Source Voltage (Vdss) | 15V |
Corrente - Scarico continuo (Id) @ 25 ° C | 1.17A |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 10V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.45nC @ 10V |
Capacità di ingresso (Ciss) (Max) @ Vds | - |
Potenza - Max | 840mW |
temperatura di esercizio | -40°C ~ 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 8-SOIC (0.154", 3.90mm Width) |
Pacchetto dispositivo fornitore | 8-SOIC |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPS1120DG4 Peso | Contattaci |
Numero parte di ricambio | TPS1120DG4-FT |
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