casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / RN2315TE85LF
codice articolo del costruttore | RN2315TE85LF |
---|---|
Numero di parte futuro | FT-RN2315TE85LF |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
RN2315TE85LF Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 200MHz |
Potenza - Max | 100mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-70, SOT-323 |
Pacchetto dispositivo fornitore | USM |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2315TE85LF Peso | Contattaci |
Numero parte di ricambio | RN2315TE85LF-FT |
BCR198WH6327XTSA1
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