casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / RN2113ACT(TPL3)
codice articolo del costruttore | RN2113ACT(TPL3) |
---|---|
Numero di parte futuro | FT-RN2113ACT(TPL3) |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
RN2113ACT(TPL3) Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | - |
Potenza - Max | 100mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-101, SOT-883 |
Pacchetto dispositivo fornitore | CST3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2113ACT(TPL3) Peso | Contattaci |
Numero parte di ricambio | RN2113ACT(TPL3)-FT |
RN1421TE85LF
Toshiba Semiconductor and Storage
RN1422TE85LF
Toshiba Semiconductor and Storage
RN1423TE85LF
Toshiba Semiconductor and Storage
RN1424TE85LF
Toshiba Semiconductor and Storage
RN1425TE85LF
Toshiba Semiconductor and Storage
RN1426TE85LF
Toshiba Semiconductor and Storage
RN1427TE85LF
Toshiba Semiconductor and Storage
RN2412TE85LF
Toshiba Semiconductor and Storage
RN2413TE85LF
Toshiba Semiconductor and Storage
RN2422TE85LF
Toshiba Semiconductor and Storage
AGLN030V5-ZQNG68
Microsemi Corporation
LFXP3C-3T144I
Lattice Semiconductor Corporation
XC6SLX100-N3FG484I
Xilinx Inc.
A54SX72A-FFG484
Microsemi Corporation
A54SX72A-1PQG208I
Microsemi Corporation
LCMXO2-256ZE-1SG32C
Lattice Semiconductor Corporation
10M50DAF484C8G
Intel
LFEC10E-3F484C
Lattice Semiconductor Corporation
LFE2-20E-6FN484C
Lattice Semiconductor Corporation
10AX066H2F34E2LG
Intel