codice articolo del costruttore | QSZ3TR |
---|---|
Numero di parte futuro | FT-QSZ3TR |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
QSZ3TR Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | NPN, PNP (Emitter Coupled) |
Corrente - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 30mA, 1.5A |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 500mA, 2V |
Potenza - Max | 500mW |
Frequenza - Transizione | 280MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-23-5 Thin, TSOT-23-5 |
Pacchetto dispositivo fornitore | TSMT5 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
QSZ3TR Peso | Contattaci |
Numero parte di ricambio | QSZ3TR-FT |
HN1A01FE-Y,LF
Toshiba Semiconductor and Storage
HN1B04FE-GR,LF
Toshiba Semiconductor and Storage
HN1C01FE-GR,LF
Toshiba Semiconductor and Storage
HN1A01FE-GR,LF
Toshiba Semiconductor and Storage
HN1B04FE-Y,LF
Toshiba Semiconductor and Storage
HN1C01FE-Y,LF
Toshiba Semiconductor and Storage
HN2A01FE-GR(TE85LF
Toshiba Semiconductor and Storage
HN2A01FE-Y(TE85L,F
Toshiba Semiconductor and Storage
HN2C01FE-GR(T5L,F)
Toshiba Semiconductor and Storage
HN2C01FEYTE85LF
Toshiba Semiconductor and Storage
A3PN020-1QNG68I
Microsemi Corporation
LFXP2-8E-6TN144C
Lattice Semiconductor Corporation
XC6SLX16-3FT256I
Xilinx Inc.
M1A3PE3000-FG484
Microsemi Corporation
APA600-FG256
Microsemi Corporation
EP20K200EFC672-2
Intel
5SGSMD5K3F40I4N
Intel
5SGXMABK2H40I3N
Intel
5SGXEA5K3F35C2N
Intel
XC5VLX220-1FFG1760I
Xilinx Inc.