codice articolo del costruttore | QSX8TR |
---|---|
Numero di parte futuro | FT-QSX8TR |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
QSX8TR Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 NPN (Dual) |
Corrente - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 350mV @ 25mA, 500mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA, 2V |
Potenza - Max | 1.25W |
Frequenza - Transizione | 320MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-23-6 Thin, TSOT-23-6 |
Pacchetto dispositivo fornitore | TSMT6 (SC-95) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
QSX8TR Peso | Contattaci |
Numero parte di ricambio | QSX8TR-FT |
MAT14ARZ-RL
Analog Devices Inc.
ULN2003F12FN-7
Diodes Incorporated
HN2A01FU-Y(TE85L,F
Toshiba Semiconductor and Storage
HN2C01FU-GR(T5L,F)
Toshiba Semiconductor and Storage
HN2C01FU-Y(TE85L,F
Toshiba Semiconductor and Storage
HN2A01FU-GR(TE85LF
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HN1A01FE-Y,LF
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HN1B04FE-GR,LF
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HN1C01FE-GR,LF
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HN1A01FE-GR,LF
Toshiba Semiconductor and Storage
LCMXO256E-3T100C
Lattice Semiconductor Corporation
XCV100-4FG256I
Xilinx Inc.
XC3S2000-5FG456C
Xilinx Inc.
A54SX32A-TQG176M
Microsemi Corporation
AGLN250V2-ZVQG100I
Microsemi Corporation
5SGXMA5N1F40C2N
Intel
XC4005E-2PC84C
Xilinx Inc.
A3P600L-1FGG144
Microsemi Corporation
LFE2-20SE-5FN484C
Lattice Semiconductor Corporation
EPF10K30AQC240-1N
Intel