codice articolo del costruttore | QS5Y1TR |
---|---|
Numero di parte futuro | FT-QS5Y1TR |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
QS5Y1TR Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN, PNP (Emitter Coupled) |
Corrente - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
Corrente - Limite del collettore (max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
Potenza - Max | 1.25W |
Frequenza - Transizione | 300MHz, 270MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-23-5 Thin, TSOT-23-5 |
Pacchetto dispositivo fornitore | TSMT5 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
QS5Y1TR Peso | Contattaci |
Numero parte di ricambio | QS5Y1TR-FT |
HN2C01FU-GR(T5L,F)
Toshiba Semiconductor and Storage
HN2C01FU-Y(TE85L,F
Toshiba Semiconductor and Storage
HN2A01FU-GR(TE85LF
Toshiba Semiconductor and Storage
HN1A01FE-Y,LF
Toshiba Semiconductor and Storage
HN1B04FE-GR,LF
Toshiba Semiconductor and Storage
HN1C01FE-GR,LF
Toshiba Semiconductor and Storage
HN1A01FE-GR,LF
Toshiba Semiconductor and Storage
HN1B04FE-Y,LF
Toshiba Semiconductor and Storage
HN1C01FE-Y,LF
Toshiba Semiconductor and Storage
HN2A01FE-GR(TE85LF
Toshiba Semiconductor and Storage
XC4006E-2TQ144I
Xilinx Inc.
LCMXO640E-3TN144I
Lattice Semiconductor Corporation
AGLN060V5-ZCSG81I
Microsemi Corporation
5SGXEA4K3F40I4
Intel
EP4S100G5F45I2N
Intel
XC5VLX155-2FFG1153C
Xilinx Inc.
XC7K410T-2FB900I
Xilinx Inc.
XC7A15T-2CPG236I
Xilinx Inc.
LFX200B-04FN256C
Lattice Semiconductor Corporation
5AGXFB3H4F35I3G
Intel