codice articolo del costruttore | QS5W1TR |
---|---|
Numero di parte futuro | FT-QS5W1TR |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
QS5W1TR Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 NPN (Dual) Common Emitter |
Corrente - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
Corrente - Limite del collettore (max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
Potenza - Max | 1.25W |
Frequenza - Transizione | 270MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-23-5 Thin, TSOT-23-5 |
Pacchetto dispositivo fornitore | TSMT5 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
QS5W1TR Peso | Contattaci |
Numero parte di ricambio | QS5W1TR-FT |
ULN2003F12FN-7
Diodes Incorporated
HN2A01FU-Y(TE85L,F
Toshiba Semiconductor and Storage
HN2C01FU-GR(T5L,F)
Toshiba Semiconductor and Storage
HN2C01FU-Y(TE85L,F
Toshiba Semiconductor and Storage
HN2A01FU-GR(TE85LF
Toshiba Semiconductor and Storage
HN1A01FE-Y,LF
Toshiba Semiconductor and Storage
HN1B04FE-GR,LF
Toshiba Semiconductor and Storage
HN1C01FE-GR,LF
Toshiba Semiconductor and Storage
HN1A01FE-GR,LF
Toshiba Semiconductor and Storage
HN1B04FE-Y,LF
Toshiba Semiconductor and Storage
A54SX32A-FG484
Microsemi Corporation
M7AFS600-FG256
Microsemi Corporation
LFE5U-85F-6BG756I
Lattice Semiconductor Corporation
A10V10B-PLG68C
Microsemi Corporation
EP20K600CF672C9
Intel
EP20K600EFC672-1N
Intel
10M08DAF484I7G
Intel
10AX032E2F27I2SG
Intel
XC7K160T-1FB484I
Xilinx Inc.
LCMXO3L-4300E-6MG121I
Lattice Semiconductor Corporation