casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / PQMD12Z
codice articolo del costruttore | PQMD12Z |
---|---|
Numero di parte futuro | FT-PQMD12Z |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
PQMD12Z Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | 230MHz, 180MHz |
Potenza - Max | 350mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-XFDFN Exposed Pad |
Pacchetto dispositivo fornitore | DFN1010B-6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
PQMD12Z Peso | Contattaci |
Numero parte di ricambio | PQMD12Z-FT |
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