casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / FJV3109RMTF
codice articolo del costruttore | FJV3109RMTF |
---|---|
Numero di parte futuro | FT-FJV3109RMTF |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
FJV3109RMTF Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | 250MHz |
Potenza - Max | 200mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SOT-23-3 (TO-236) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJV3109RMTF Peso | Contattaci |
Numero parte di ricambio | FJV3109RMTF-FT |
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