casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / EMH1FHAT2R
codice articolo del costruttore | EMH1FHAT2R |
---|---|
Numero di parte futuro | FT-EMH1FHAT2R |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
EMH1FHAT2R Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | - |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Corrente - Limite del collettore (max) | - |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-563, SOT-666 |
Pacchetto dispositivo fornitore | EMT6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMH1FHAT2R Peso | Contattaci |
Numero parte di ricambio | EMH1FHAT2R-FT |
RN2906,LF
Toshiba Semiconductor and Storage
RN2911,LF
Toshiba Semiconductor and Storage
RN4902,LF(CT
Toshiba Semiconductor and Storage
RN4904,LF
Toshiba Semiconductor and Storage
RN4910,LF
Toshiba Semiconductor and Storage
RN4990(T5L,F,T)
Toshiba Semiconductor and Storage
RN4991(T5L,F,T)
Toshiba Semiconductor and Storage
RN4981,LF(CT
Toshiba Semiconductor and Storage
RN1902,LF(CT
Toshiba Semiconductor and Storage
RN1904,LF(CT
Toshiba Semiconductor and Storage
EP20K30ETC144-3N
Intel
XC3S1500-5FG320C
Xilinx Inc.
XC4VFX100-11FFG1517I
Xilinx Inc.
A42MX36-3PQ208
Microsemi Corporation
10M40DCF256I7G
Intel
EP4CE22F17C9LN
Intel
5SGSMD5H3F35I3N
Intel
XC7VX415T-2FFG1927C
Xilinx Inc.
LFX200EB-03F256I
Lattice Semiconductor Corporation
EP2AGX125EF35C6N
Intel