casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / EMD30T2R
codice articolo del costruttore | EMD30T2R |
---|---|
Numero di parte futuro | FT-EMD30T2R |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
EMD30T2R Stato (ciclo di vita) | Disponibile |
Stato parte | Not For New Designs |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA, 200mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 30V |
Resistor - Base (R1) | 10 kOhms, 1 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 250MHz, 260MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-563, SOT-666 |
Pacchetto dispositivo fornitore | EMT6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMD30T2R Peso | Contattaci |
Numero parte di ricambio | EMD30T2R-FT |
RN2903,LF
Toshiba Semiconductor and Storage
RN2904(T5L,F,T)
Toshiba Semiconductor and Storage
RN2904,LF
Toshiba Semiconductor and Storage
RN2905,LF(CT
Toshiba Semiconductor and Storage
RN2906(T5L,F,T)
Toshiba Semiconductor and Storage
RN2907(T5L,F,T)
Toshiba Semiconductor and Storage
RN2908(T5L,F,T)
Toshiba Semiconductor and Storage
RN2909(T5L,F,T)
Toshiba Semiconductor and Storage
RN2910(T5L,F,T)
Toshiba Semiconductor and Storage
RN2911(T5L,F,T)
Toshiba Semiconductor and Storage
XC4028XL-2HQ304I
Xilinx Inc.
XC4013XL-1PQ208I
Xilinx Inc.
A42MX09-3VQG100
Microsemi Corporation
A54SX16-1VQG100I
Microsemi Corporation
EP20K400EFC672-2XB
Intel
XC7K325T-2FFG900C
Xilinx Inc.
LFEC33E-4F672C
Lattice Semiconductor Corporation
LFE2-20SE-6F484C
Lattice Semiconductor Corporation
LFE5U-45F-6BG256C
Lattice Semiconductor Corporation
EP20K400BC652-2
Intel