casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / RN2903,LF
codice articolo del costruttore | RN2903,LF |
---|---|
Numero di parte futuro | FT-RN2903,LF |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
RN2903,LF Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 200MHz |
Potenza - Max | 200mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | US6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2903,LF Peso | Contattaci |
Numero parte di ricambio | RN2903,LF-FT |
RN1962FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1963FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1964FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1965FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1967FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1968FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1969FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1970FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1971FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2902FE(T5L,F,T)
Toshiba Semiconductor and Storage
XC4010XL-1PQ100C
Xilinx Inc.
XC7A50T-1FG484C
Xilinx Inc.
A42MX16-1PQ208I
Microsemi Corporation
LFE2M70E-6F1152I
Lattice Semiconductor Corporation
LCMXO2-256ZE-2SG32I
Lattice Semiconductor Corporation
EP4CGX15BN11C8N
Intel
XC7K410T-1FFG900I
Xilinx Inc.
XC6SLX25-L1CSG324I
Xilinx Inc.
LCMXO3LF-640E-6MG121I
Lattice Semiconductor Corporation
EPF10K100EQC240-3N
Intel