casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / RN2911(T5L,F,T)
codice articolo del costruttore | RN2911(T5L,F,T) |
---|---|
Numero di parte futuro | FT-RN2911(T5L,F,T) |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
RN2911(T5L,F,T) Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | 200MHz |
Potenza - Max | 200mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | US6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2911(T5L,F,T) Peso | Contattaci |
Numero parte di ricambio | RN2911(T5L,F,T)-FT |
RN2902FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN2904FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN2906FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2961FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2962FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2963FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2964FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2965FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2966FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2967FE(TE85L,F)
Toshiba Semiconductor and Storage
XC4005E-2TQ144C
Xilinx Inc.
XCS30XL-4VQ100C
Xilinx Inc.
XC2V1000-5FGG456I
Xilinx Inc.
XCKU025-1FFVA1156C
Xilinx Inc.
XA3S1600E-4FGG484Q
Xilinx Inc.
A3PE3000L-FGG484M
Microsemi Corporation
A3P030-2VQ100I
Microsemi Corporation
AGLN250V5-VQG100
Microsemi Corporation
5SGXMA5H3F35C2N
Intel
A40MX04-2PQG100
Microsemi Corporation