casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / DTA023YMT2L
codice articolo del costruttore | DTA023YMT2L |
---|---|
Numero di parte futuro | FT-DTA023YMT2L |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
DTA023YMT2L Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
Corrente - Limite del collettore (max) | - |
Frequenza - Transizione | 250MHz |
Potenza - Max | 150mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | VMT3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTA023YMT2L Peso | Contattaci |
Numero parte di ricambio | DTA023YMT2L-FT |
RN2303(TE85L,F)
Toshiba Semiconductor and Storage
RN2305(TE85L,F)
Toshiba Semiconductor and Storage
RN1312(TE85L,F)
Toshiba Semiconductor and Storage
RN1314(TE85L,F)
Toshiba Semiconductor and Storage
RN1317(TE85L,F)
Toshiba Semiconductor and Storage
RN1318(TE85L,F)
Toshiba Semiconductor and Storage
RN2301,LF
Toshiba Semiconductor and Storage
RN2306,LF
Toshiba Semiconductor and Storage
RN2310(TE85L,F)
Toshiba Semiconductor and Storage
RN2310,LF
Toshiba Semiconductor and Storage
XCS30XL-5TQ144C
Xilinx Inc.
AT40K05AL-1DQI
Microchip Technology
EP3SE260H780C4LN
Intel
10M50DAF672C6G
Intel
XC5VLX110-1FF1760I
Xilinx Inc.
XC6VLX130T-1FF484C
Xilinx Inc.
AGL600V2-FG144I
Microsemi Corporation
LFX125EB-03FN256I
Lattice Semiconductor Corporation
LFE2-12SE-5F484I
Lattice Semiconductor Corporation
5SGSMD3H2F35I2LN
Intel