casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / RN1317(TE85L,F)
codice articolo del costruttore | RN1317(TE85L,F) |
---|---|
Numero di parte futuro | FT-RN1317(TE85L,F) |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
RN1317(TE85L,F) Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 250MHz |
Potenza - Max | 100mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-70, SOT-323 |
Pacchetto dispositivo fornitore | USM |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1317(TE85L,F) Peso | Contattaci |
Numero parte di ricambio | RN1317(TE85L,F)-FT |
RN1105MFV,L3F
Toshiba Semiconductor and Storage
RN1106MFV(TL3,T)
Toshiba Semiconductor and Storage
RN1109MFV,L3F
Toshiba Semiconductor and Storage
RN1131MFV(TL3,T)
Toshiba Semiconductor and Storage
RN2104MFV,L3F
Toshiba Semiconductor and Storage
RN2107MFV,L3F
Toshiba Semiconductor and Storage
RN2118MFV(TPL3)
Toshiba Semiconductor and Storage
RN2119MFV(TPL3)
Toshiba Semiconductor and Storage
RN1406,LF
Toshiba Semiconductor and Storage
RN1402,LF
Toshiba Semiconductor and Storage
XC3S100E-4TQ144I
Xilinx Inc.
M2GL010T-VFG400I
Microsemi Corporation
10CL040YF484C6G
Intel
EP4CGX75CF23I7
Intel
5SGXMA5N3F40I4N
Intel
EP4CE10E22C9LN
Intel
XC7VX690T-1FFG1761C
Xilinx Inc.
XC7S6-2CSGA225I
Xilinx Inc.
A42MX24-FPQ160
Microsemi Corporation
AGL060V2-CS121I
Microsemi Corporation