casa / prodotti / Prodotti semiconduttori discreti / Transistor - FET, MOSFET - Array / CSD88599Q5DCT
codice articolo del costruttore | CSD88599Q5DCT |
---|---|
Numero di parte futuro | FT-CSD88599Q5DCT |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | NexFET™ |
CSD88599Q5DCT Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Tipo FET | 2 N-Channel (Half Bridge) |
Caratteristica FET | Standard |
Drain to Source Voltage (Vdss) | 60V |
Corrente - Scarico continuo (Id) @ 25 ° C | - |
Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 30A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
Capacità di ingresso (Ciss) (Max) @ Vds | 4840pF @ 30V |
Potenza - Max | 12W |
temperatura di esercizio | -55°C ~ 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 22-PowerTFDFN |
Pacchetto dispositivo fornitore | 22-VSON-CLIP (5x6) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD88599Q5DCT Peso | Contattaci |
Numero parte di ricambio | CSD88599Q5DCT-FT |
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