codice articolo del costruttore | BUT70W |
---|---|
Numero di parte futuro | FT-BUT70W |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
BUT70W Stato (ciclo di vita) | Disponibile |
Stato parte | Not For New Designs |
Transistor Type | NPN |
Corrente - Collector (Ic) (Max) | 32A |
Voltage - Collector Emitter Breakdown (Max) | 125V |
Vce Saturation (Max) @ Ib, Ic | 900mV @ 7A, 70A |
Corrente - Limite del collettore (max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Potenza - Max | 200W |
Frequenza - Transizione | - |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-247-3 |
Pacchetto dispositivo fornitore | TO-247-3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
BUT70W Peso | Contattaci |
Numero parte di ricambio | BUT70W-FT |
2SC2859-Y(TE85L,F)
Toshiba Semiconductor and Storage
2SC4738-GR,LF
Toshiba Semiconductor and Storage
2SA1832-GR,LF
Toshiba Semiconductor and Storage
2SA1832-Y,LF
Toshiba Semiconductor and Storage
2SC4738-Y,LF
Toshiba Semiconductor and Storage
2SC4738-BL(TE85L,F
Toshiba Semiconductor and Storage
2SC4117-BL,LF
Toshiba Semiconductor and Storage
2SA1587-GR,LF
Toshiba Semiconductor and Storage
2SC4116-GR,LF
Toshiba Semiconductor and Storage
2SC4116-Y,LF
Toshiba Semiconductor and Storage
M1A3P400-FG484
Microsemi Corporation
APA600-BGG456I
Microsemi Corporation
EPF10K50SFC256-2
Intel
5SGSMD8K3F40C4N
Intel
XCV100-4BG256C
Xilinx Inc.
XC7A200T-L1FBG484I
Xilinx Inc.
LFE2-50E-7FN672C
Lattice Semiconductor Corporation
LCMXO2-640ZE-2MG132I
Lattice Semiconductor Corporation
5AGXMA1D4F31I3N
Intel
EP4CE115F29I8L
Intel