casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single / 2SA1832-GR,LF
codice articolo del costruttore | 2SA1832-GR,LF |
---|---|
Numero di parte futuro | FT-2SA1832-GR,LF |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
2SA1832-GR,LF Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP |
Corrente - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Potenza - Max | 100mW |
Frequenza - Transizione | 80MHz |
temperatura di esercizio | 125°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-75, SOT-416 |
Pacchetto dispositivo fornitore | SSM |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SA1832-GR,LF Peso | Contattaci |
Numero parte di ricambio | 2SA1832-GR,LF-FT |
2SC2229-Y(T6SAN2FM
Toshiba Semiconductor and Storage
2SC2229-Y(TE6,F,M)
Toshiba Semiconductor and Storage
2SC2229-Y,F(J
Toshiba Semiconductor and Storage
2SC2235(T6KMAT,F,M
Toshiba Semiconductor and Storage
2SC2235-O(FA1,F,M)
Toshiba Semiconductor and Storage
2SC2235-O(T6ASN,FM
Toshiba Semiconductor and Storage
2SC2235-O(T6FJT,AF
Toshiba Semiconductor and Storage
2SC2235-O(T6FJT,FM
Toshiba Semiconductor and Storage
2SC2235-O,F(J
Toshiba Semiconductor and Storage
2SC2235-Y(6MBH1,AF
Toshiba Semiconductor and Storage
EX64-PTQG100I
Microsemi Corporation
M1AGL600V5-FGG484I
Microsemi Corporation
A3P250-PQG208
Microsemi Corporation
10M40DCF256A7G
Intel
EP3SL340F1517C3
Intel
XC6VLX365T-1FFG1759C
Xilinx Inc.
AGL125V5-FG144
Microsemi Corporation
LFEC33E-3FN484I
Lattice Semiconductor Corporation
LCMXO2-4000HC-4MG132I
Lattice Semiconductor Corporation
10M04SCM153I7G
Intel