casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single / 2SC4116-GR,LF
codice articolo del costruttore | 2SC4116-GR,LF |
---|---|
Numero di parte futuro | FT-2SC4116-GR,LF |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
2SC4116-GR,LF Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN |
Corrente - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA, 6V |
Potenza - Max | 100mW |
Frequenza - Transizione | 80MHz |
temperatura di esercizio | 125°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-70, SOT-323 |
Pacchetto dispositivo fornitore | USM |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SC4116-GR,LF Peso | Contattaci |
Numero parte di ricambio | 2SC4116-GR,LF-FT |
2SC2235-O(T6FJT,AF
Toshiba Semiconductor and Storage
2SC2235-O(T6FJT,FM
Toshiba Semiconductor and Storage
2SC2235-O,F(J
Toshiba Semiconductor and Storage
2SC2235-Y(6MBH1,AF
Toshiba Semiconductor and Storage
2SC2235-Y(DNSO,AF)
Toshiba Semiconductor and Storage
2SC2235-Y(MBSH1,FM
Toshiba Semiconductor and Storage
2SC2235-Y(T6CANOFM
Toshiba Semiconductor and Storage
2SC2235-Y(T6CN,A,F
Toshiba Semiconductor and Storage
2SC2235-Y(T6FJT,AF
Toshiba Semiconductor and Storage
2SC2235-Y(T6FJT,FM
Toshiba Semiconductor and Storage
LCMXO2-2000HE-5TG144C
Lattice Semiconductor Corporation
XA3S1600E-4FGG484I
Xilinx Inc.
M2GL005-1VF400I
Microsemi Corporation
LCMXO640E-3FTN256C
Lattice Semiconductor Corporation
EP3SE50F484C2
Intel
EP4CE6E22C8N
Intel
LFE2-50E-5F672I
Lattice Semiconductor Corporation
LCMXO2280E-4FTN324I
Lattice Semiconductor Corporation
5AGXMB3G6F35C6N
Intel
EP4CE30F29I7N
Intel