casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / RN2110CT(TPL3)
codice articolo del costruttore | RN2110CT(TPL3) |
---|---|
Numero di parte futuro | FT-RN2110CT(TPL3) |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
RN2110CT(TPL3) Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | - |
Potenza - Max | 50mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-101, SOT-883 |
Pacchetto dispositivo fornitore | CST3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2110CT(TPL3) Peso | Contattaci |
Numero parte di ricambio | RN2110CT(TPL3)-FT |
RN2114(TE85L,F)
Toshiba Semiconductor and Storage
RN2115,LF(CT
Toshiba Semiconductor and Storage
RN2116,LF(CT
Toshiba Semiconductor and Storage
RN1102T5LFT
Toshiba Semiconductor and Storage
RN1104T5LFT
Toshiba Semiconductor and Storage
RN1108(T5L,F,T)
Toshiba Semiconductor and Storage
RN1109(T5L,F,T)
Toshiba Semiconductor and Storage
RN1110(T5L,F,T)
Toshiba Semiconductor and Storage
RN1112(T5L,F,T)
Toshiba Semiconductor and Storage
RN1114(T5L,F,T)
Toshiba Semiconductor and Storage
LCMXO2-1200HC-4TG144C
Lattice Semiconductor Corporation
LCMXO256C-5T100C
Lattice Semiconductor Corporation
AX500-FGG484
Microsemi Corporation
APA750-PQG208A
Microsemi Corporation
M2GL005S-1VFG400I
Microsemi Corporation
M1AGL250V2-VQG100I
Microsemi Corporation
AT40K10-2DQC
Microchip Technology
EP1S20B672C6
Intel
XC5VLX110-1FFG1760CES
Xilinx Inc.
10AX066K2F40I2LG
Intel