casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / RN2110CT(TPL3)
codice articolo del costruttore | RN2110CT(TPL3) |
---|---|
Numero di parte futuro | FT-RN2110CT(TPL3) |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
RN2110CT(TPL3) Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | - |
Potenza - Max | 50mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-101, SOT-883 |
Pacchetto dispositivo fornitore | CST3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2110CT(TPL3) Peso | Contattaci |
Numero parte di ricambio | RN2110CT(TPL3)-FT |
RN2114(TE85L,F)
Toshiba Semiconductor and Storage
RN2115,LF(CT
Toshiba Semiconductor and Storage
RN2116,LF(CT
Toshiba Semiconductor and Storage
RN1102T5LFT
Toshiba Semiconductor and Storage
RN1104T5LFT
Toshiba Semiconductor and Storage
RN1108(T5L,F,T)
Toshiba Semiconductor and Storage
RN1109(T5L,F,T)
Toshiba Semiconductor and Storage
RN1110(T5L,F,T)
Toshiba Semiconductor and Storage
RN1112(T5L,F,T)
Toshiba Semiconductor and Storage
RN1114(T5L,F,T)
Toshiba Semiconductor and Storage
AGL400V5-FG256I
Microsemi Corporation
M2GL005-1VFG256I
Microsemi Corporation
ICE40LM1K-SWG25TR
Lattice Semiconductor Corporation
A3PN250-VQ100
Microsemi Corporation
EP4CGX150DF27C7N
Intel
5SGXEA4K1F40C1N
Intel
LFE2-12E-6F256C
Lattice Semiconductor Corporation
LFE2-20E-6F484I
Lattice Semiconductor Corporation
10AX115R3F40E2LG
Intel
EP2AGX45DF29I3N
Intel