casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / RN1907,LF
codice articolo del costruttore | RN1907,LF |
---|---|
Numero di parte futuro | FT-RN1907,LF |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
RN1907,LF Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 250MHz |
Potenza - Max | 200mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | US6 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1907,LF Peso | Contattaci |
Numero parte di ricambio | RN1907,LF-FT |
RN1901FETE85LF
Toshiba Semiconductor and Storage
RN1909FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2901FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2911FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1906FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN1910FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN1961FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1962FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1963FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1964FE(TE85L,F)
Toshiba Semiconductor and Storage
XC3S1500-4FG320I
Xilinx Inc.
LCMXO3L-4300C-5BG400C
Lattice Semiconductor Corporation
XC4VFX40-10FF672C
Xilinx Inc.
XC5VLX50-1FF676I
Xilinx Inc.
XC7A100T-1CSG324C
Xilinx Inc.
AGL125V5-FG144
Microsemi Corporation
LFE3-95EA-6LFN672I
Lattice Semiconductor Corporation
LFXP2-17E-5F484I
Lattice Semiconductor Corporation
EP1C4F400C8
Intel
EP20K300EQC240-2X
Intel