casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / PDTD123TS,126
codice articolo del costruttore | PDTD123TS,126 |
---|---|
Numero di parte futuro | FT-PDTD123TS,126 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
PDTD123TS,126 Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 500mW |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Pacchetto dispositivo fornitore | TO-92-3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTD123TS,126 Peso | Contattaci |
Numero parte di ricambio | PDTD123TS,126-FT |
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