casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array / PBSS4160PANP,115
codice articolo del costruttore | PBSS4160PANP,115 |
---|---|
Numero di parte futuro | FT-PBSS4160PANP,115 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
PBSS4160PANP,115 Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN, PNP |
Corrente - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 120mV @ 50mA, 500mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA, 2V |
Potenza - Max | 510mW |
Frequenza - Transizione | 175MHz |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-UDFN Exposed Pad |
Pacchetto dispositivo fornitore | 6-HUSON-EP (2x2) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
PBSS4160PANP,115 Peso | Contattaci |
Numero parte di ricambio | PBSS4160PANP,115-FT |
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