casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array / MBT6429DW1T1G
codice articolo del costruttore | MBT6429DW1T1G |
---|---|
Numero di parte futuro | FT-MBT6429DW1T1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
MBT6429DW1T1G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 2 NPN (Dual) |
Corrente - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
Corrente - Limite del collettore (max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100µA, 5V |
Potenza - Max | 150mW |
Frequenza - Transizione | 700MHz |
temperatura di esercizio | -55°C ~ 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | SC-88/SC70-6/SOT-363 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
MBT6429DW1T1G Peso | Contattaci |
Numero parte di ricambio | MBT6429DW1T1G-FT |
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