casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / NSVMMUN2132LT1G
codice articolo del costruttore | NSVMMUN2132LT1G |
---|---|
Numero di parte futuro | FT-NSVMMUN2132LT1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSVMMUN2132LT1G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 246mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SOT-23-3 (TO-236) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVMMUN2132LT1G Peso | Contattaci |
Numero parte di ricambio | NSVMMUN2132LT1G-FT |
MMUN2113LT3G
ON Semiconductor
MMUN2115LT1G
ON Semiconductor
MMUN2137LT1G
ON Semiconductor
MMUN2138LT1G
ON Semiconductor
MMUN2216LT1G
ON Semiconductor
MMUN2234LT1G
ON Semiconductor
MMUN2237LT1G
ON Semiconductor
MUN2212T1G
ON Semiconductor
MUN2216T1G
ON Semiconductor
MUN2234T1G
ON Semiconductor
A3P015-1QNG68
Microsemi Corporation
LFE2-6SE-6TN144C
Lattice Semiconductor Corporation
XC2VP30-5FGG676I
Xilinx Inc.
XC4013E-2PQ208C
Xilinx Inc.
AX250-FG484M
Microsemi Corporation
5SGXEA5N1F40C2LN
Intel
5SGXEA5K1F35C2LN
Intel
A3P1000L-FGG144
Microsemi Corporation
A3P400-FGG144
Microsemi Corporation
LFE3-95EA-9FN672C
Lattice Semiconductor Corporation