casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / NSVDTC113EM3T5G
codice articolo del costruttore | NSVDTC113EM3T5G |
---|---|
Numero di parte futuro | FT-NSVDTC113EM3T5G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSVDTC113EM3T5G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 260mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-723 |
Pacchetto dispositivo fornitore | SOT-723 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVDTC113EM3T5G Peso | Contattaci |
Numero parte di ricambio | NSVDTC113EM3T5G-FT |
MUN5116T1G
ON Semiconductor
MUN5135T1G
ON Semiconductor
MUN5138T1G
ON Semiconductor
MUN5140T1G
ON Semiconductor
MUN5141T1G
ON Semiconductor
MUN5215T1G
ON Semiconductor
MUN5237T1G
ON Semiconductor
MUN5238T1G
ON Semiconductor
MUN5240T1G
ON Semiconductor
MUN5241T1G
ON Semiconductor
A3P030-1QNG68
Microsemi Corporation
M2GL050S-1FGG484I
Microsemi Corporation
LFE2-70E-5F900I
Lattice Semiconductor Corporation
10M50DAF256C6GES
Intel
5SGSMD4K3F40I3N
Intel
XC7VX415T-3FFG1157E
Xilinx Inc.
XC6VLX550T-2FFG1760C
Xilinx Inc.
LCMXO2-4000HE-6BG332C
Lattice Semiconductor Corporation
LCMXO2-640ZE-2MG132I
Lattice Semiconductor Corporation
EP20K100EQC240-1N
Intel