casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array / NSV40302PDR2G
codice articolo del costruttore | NSV40302PDR2G |
---|---|
Numero di parte futuro | FT-NSV40302PDR2G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSV40302PDR2G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN, PNP |
Corrente - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 115mV @ 200mA, 2A |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1A, 2V |
Potenza - Max | 653mW |
Frequenza - Transizione | 100MHz |
temperatura di esercizio | -55°C ~ 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 8-SOIC (0.154", 3.90mm Width) |
Pacchetto dispositivo fornitore | 8-SOIC |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSV40302PDR2G Peso | Contattaci |
Numero parte di ricambio | NSV40302PDR2G-FT |
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