casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / NSTB60BDW1T1G
codice articolo del costruttore | NSTB60BDW1T1G |
---|---|
Numero di parte futuro | FT-NSTB60BDW1T1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSTB60BDW1T1G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Corrente - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 120 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | 140MHz |
Potenza - Max | 250mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-TSSOP, SC-88, SOT-363 |
Pacchetto dispositivo fornitore | SC-88/SC70-6/SOT-363 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSTB60BDW1T1G Peso | Contattaci |
Numero parte di ricambio | NSTB60BDW1T1G-FT |
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