casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / NSBC143EPDXV6T1
codice articolo del costruttore | NSBC143EPDXV6T1 |
---|---|
Numero di parte futuro | FT-NSBC143EPDXV6T1 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSBC143EPDXV6T1 Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 500mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-563, SOT-666 |
Pacchetto dispositivo fornitore | SOT-563 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBC143EPDXV6T1 Peso | Contattaci |
Numero parte di ricambio | NSBC143EPDXV6T1-FT |
NSBC143TPDXV6T1G
ON Semiconductor
NSBC143ZDXV6T1G
ON Semiconductor
NSBC124EDXV6T1G
ON Semiconductor
NSBC124XDXV6T1G
ON Semiconductor
NSBC123JPDXV6T1G
ON Semiconductor
NSBC114YPDXV6T1G
ON Semiconductor
NSBC124EPDXV6T1G
ON Semiconductor
NSVBC123JPDXV6T1G
ON Semiconductor
NSBC124EPDXV6T5G
ON Semiconductor
NSBC144EPDXV6T5G
ON Semiconductor
LCMXO2-2000ZE-3TG100I
Lattice Semiconductor Corporation
LCMXO640C-3T100C
Lattice Semiconductor Corporation
XC2VP4-6FGG256I
Xilinx Inc.
XCS10-3VQ100C
Xilinx Inc.
P1AFS1500-2FG484I
Microsemi Corporation
EP1K100FC256-2N
Intel
5SGSMD6K2F40I3LN
Intel
EP3SL200F1152I4L
Intel
EP1S30F780C7N
Intel
EP2S90F1020C5N
Intel