casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / NSBC124XPDXV6T5G
codice articolo del costruttore | NSBC124XPDXV6T5G |
---|---|
Numero di parte futuro | FT-NSBC124XPDXV6T5G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSBC124XPDXV6T5G Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 500mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-563, SOT-666 |
Pacchetto dispositivo fornitore | SOT-563 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBC124XPDXV6T5G Peso | Contattaci |
Numero parte di ricambio | NSBC124XPDXV6T5G-FT |
NSBC143ZPDXV6T1G
ON Semiconductor
NSBC144EDXV6T1G
ON Semiconductor
NSBC143TPDXV6T1G
ON Semiconductor
NSBC143ZDXV6T1G
ON Semiconductor
NSBC124EDXV6T1G
ON Semiconductor
NSBC124XDXV6T1G
ON Semiconductor
NSBC123JPDXV6T1G
ON Semiconductor
NSBC114YPDXV6T1G
ON Semiconductor
NSBC124EPDXV6T1G
ON Semiconductor
NSVBC123JPDXV6T1G
ON Semiconductor
XC3S1400AN-5FGG484C
Xilinx Inc.
A42MX36-BG272I
Microsemi Corporation
LCMXO640C-3FTN256I
Lattice Semiconductor Corporation
A3PN125-1VQG100
Microsemi Corporation
EP20K200EFC484-2N
Intel
10M16DCF256I6G
Intel
5SEEBH40I4N
Intel
EP4SGX530KH40C3N
Intel
LFE3-150EA-6FN1156I
Lattice Semiconductor Corporation
LFE2M50SE-7FN900C
Lattice Semiconductor Corporation