casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / NSBA144TF3T5G
codice articolo del costruttore | NSBA144TF3T5G |
---|---|
Numero di parte futuro | FT-NSBA144TF3T5G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSBA144TF3T5G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 254mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-1123 |
Pacchetto dispositivo fornitore | SOT-1123 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBA144TF3T5G Peso | Contattaci |
Numero parte di ricambio | NSBA144TF3T5G-FT |
MMUN2112LT1G
ON Semiconductor
MUN2213T1G
ON Semiconductor
NSVMMUN2212LT1G
ON Semiconductor
SMMUN2113LT1G
ON Semiconductor
SMMUN2114LT1G
ON Semiconductor
SMUN2114T1G
ON Semiconductor
SMUN2232T1G
ON Semiconductor
SMUN2111T3G
ON Semiconductor
MMUN2132LT1G
ON Semiconductor
MUN2114T1G
ON Semiconductor
XC5206-6PQ100C
Xilinx Inc.
XC3SD3400A-5FGG676C
Xilinx Inc.
M2GL025-1VFG256I
Microsemi Corporation
A42MX09-3VQ100I
Microsemi Corporation
EP2C70F672C8N
Intel
10CX150YF672I6G
Intel
XC2VP30-5FFG1152I
Xilinx Inc.
LCMXO2-4000HC-4BG332I
Lattice Semiconductor Corporation
LFE3-70E-6FN484I
Lattice Semiconductor Corporation
EPF10K130EQC240-2X
Intel