casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / NSBA123EF3T5G
codice articolo del costruttore | NSBA123EF3T5G |
---|---|
Numero di parte futuro | FT-NSBA123EF3T5G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSBA123EF3T5G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 254mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-1123 |
Pacchetto dispositivo fornitore | SOT-1123 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBA123EF3T5G Peso | Contattaci |
Numero parte di ricambio | NSBA123EF3T5G-FT |
MMUN2240LT1G
ON Semiconductor
NSVMMUN2133LT1G
ON Semiconductor
NSVMMUN2232LT1G
ON Semiconductor
SMMUN2214LT1G
ON Semiconductor
MMUN2116LT1G
ON Semiconductor
SMMUN2213LT1G
ON Semiconductor
MMUN2112LT1G
ON Semiconductor
MUN2213T1G
ON Semiconductor
NSVMMUN2212LT1G
ON Semiconductor
SMMUN2113LT1G
ON Semiconductor
XCV300E-7FG456C
Xilinx Inc.
A3P600-2FGG484
Microsemi Corporation
EP4CGX50CF23C8
Intel
5SGSMD4E1H29C1N
Intel
10CL006YE144I7G
Intel
5SGXMA7N3F45I3N
Intel
A1020B-2PLG44C
Microsemi Corporation
LFE2-50SE-6F484C
Lattice Semiconductor Corporation
LCMXO2-2000ZE-3BG256C
Lattice Semiconductor Corporation
LCMXO2-1200HC-5MG132I
Lattice Semiconductor Corporation