casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / NSBA123EF3T5G
codice articolo del costruttore | NSBA123EF3T5G |
---|---|
Numero di parte futuro | FT-NSBA123EF3T5G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
NSBA123EF3T5G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 254mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SOT-1123 |
Pacchetto dispositivo fornitore | SOT-1123 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBA123EF3T5G Peso | Contattaci |
Numero parte di ricambio | NSBA123EF3T5G-FT |
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