casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / MUN5216T1G
codice articolo del costruttore | MUN5216T1G |
---|---|
Numero di parte futuro | FT-MUN5216T1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
MUN5216T1G Stato (ciclo di vita) | Disponibile |
Stato parte | Active |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 202mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-70, SOT-323 |
Pacchetto dispositivo fornitore | SC-70-3 (SOT323) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5216T1G Peso | Contattaci |
Numero parte di ricambio | MUN5216T1G-FT |
MMUN2112LT1
ON Semiconductor
MMUN2113LT3
ON Semiconductor
MMUN2130LT1
ON Semiconductor
MMUN2134LT1
ON Semiconductor
MMUN2211LT1
ON Semiconductor
MMUN2211LT3
ON Semiconductor
MMUN2212LT1
ON Semiconductor
MMUN2215LT1
ON Semiconductor
MMUN2230LT1
ON Semiconductor
MMUN2231LT1
ON Semiconductor
LFE2-70SE-6FN900I
Lattice Semiconductor Corporation
10AX027E3F27E2LG
Intel
XC7VX485T-1FFG1158C
Xilinx Inc.
LFE2M50E-6FN672I
Lattice Semiconductor Corporation
LCMXO2280E-5B256C
Lattice Semiconductor Corporation
EP1C4F400C8N
Intel
5CEBA2U15I7
Intel
EPF10K200SRC240-3N
Intel
EPF10K50VQI240-2N
Intel
EPF6016AFC100-1
Intel