casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / MMUN2130LT1
codice articolo del costruttore | MMUN2130LT1 |
---|---|
Numero di parte futuro | FT-MMUN2130LT1 |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
MMUN2130LT1 Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 246mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SOT-23-3 (TO-236) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
MMUN2130LT1 Peso | Contattaci |
Numero parte di ricambio | MMUN2130LT1-FT |
NSVMMUN2230LT1G
ON Semiconductor
SMMUN2234LT1G
ON Semiconductor
MUN2138T1G
ON Semiconductor
MUN2238T1G
ON Semiconductor
SMMUN2211LT1G
ON Semiconductor
MMUN2232LT1G
ON Semiconductor
MUN2135T1G
ON Semiconductor
NSVMMUN2237LT1G
ON Semiconductor
MMUN2111LT1G
ON Semiconductor
MUN2240T1G
ON Semiconductor
EP20K160ETC144-3N
Intel
LCMXO2280E-4T100C
Lattice Semiconductor Corporation
AX1000-1FG484M
Microsemi Corporation
M2GL010T-1FG484I
Microsemi Corporation
A3PE1500-1PQ208I
Microsemi Corporation
A40MX04-1PL68I
Microsemi Corporation
EP4SGX180KF40I3N
Intel
EP2SGX60EF1152I4N
Intel
LCMXO2-1200HC-4MG132CR1
Lattice Semiconductor Corporation
5SGXMA3H1F35C2N
Intel