casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / MUN2211JT1G
codice articolo del costruttore | MUN2211JT1G |
---|---|
Numero di parte futuro | FT-MUN2211JT1G |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
MUN2211JT1G Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Corrente - Limite del collettore (max) | 500nA |
Frequenza - Transizione | - |
Potenza - Max | 230mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | TO-236-3, SC-59, SOT-23-3 |
Pacchetto dispositivo fornitore | SC-59 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN2211JT1G Peso | Contattaci |
Numero parte di ricambio | MUN2211JT1G-FT |
MUN2230T1G
ON Semiconductor
MMUN2130LT1G
ON Semiconductor
NSVMMUN2232LT3G
ON Semiconductor
SMUN2211T3G
ON Semiconductor
MMUN2214LT1G
ON Semiconductor
MMUN2114LT3G
ON Semiconductor
MMUN2217LT1G
ON Semiconductor
NSVMMUN2235LT1G
ON Semiconductor
MMUN2230LT1G
ON Semiconductor
MMUN2235LT1G
ON Semiconductor
XCV600E-7FG676C
Xilinx Inc.
LFE2-20SE-5Q208I
Lattice Semiconductor Corporation
M1AGL600V2-FG484
Microsemi Corporation
U1AFS250-FG256I
Microsemi Corporation
LFE3-35EA-9FTN256I
Lattice Semiconductor Corporation
AT6005-4AI
Microchip Technology
5SGXEA7N3F40I4N
Intel
EP3SL340F1517I4LN
Intel
XC5VLX330-1FF1760C
Xilinx Inc.
LFXP2-5E-6M132C
Lattice Semiconductor Corporation