casa / prodotti / Prodotti semiconduttori discreti / Transistor - FET, MOSFET - Array / MCH6605-TL-E
codice articolo del costruttore | MCH6605-TL-E |
---|---|
Numero di parte futuro | FT-MCH6605-TL-E |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
MCH6605-TL-E Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Tipo FET | 2 P-Channel (Dual) |
Caratteristica FET | Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss) | 50V |
Corrente - Scarico continuo (Id) @ 25 ° C | 140mA |
Rds On (Max) @ Id, Vgs | 22 Ohm @ 40mA, 10V |
Vgs (th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 1.32nC @ 10V |
Capacità di ingresso (Ciss) (Max) @ Vds | 6.2pF @ 10V |
Potenza - Max | 800mW |
temperatura di esercizio | 150°C (TJ) |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | 6-SMD, Flat Leads |
Pacchetto dispositivo fornitore | 6-MCPH |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
MCH6605-TL-E Peso | Contattaci |
Numero parte di ricambio | MCH6605-TL-E-FT |
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