casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / FJX3012RTF
codice articolo del costruttore | FJX3012RTF |
---|---|
Numero di parte futuro | FT-FJX3012RTF |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
FJX3012RTF Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | 250MHz |
Potenza - Max | 200mW |
Tipo di montaggio | Surface Mount |
Pacchetto / caso | SC-70, SOT-323 |
Pacchetto dispositivo fornitore | SC-70 (SOT323) |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJX3012RTF Peso | Contattaci |
Numero parte di ricambio | FJX3012RTF-FT |
SMMUN2216LT3G
ON Semiconductor
NSVMMUN2132LT1G
ON Semiconductor
SMMUN2213LT3G
ON Semiconductor
SMUN2214T3G
ON Semiconductor
MMUN2236LT1G
ON Semiconductor
MUN2111T1G
ON Semiconductor
MUN2140T1G
ON Semiconductor
MUN2232T1G
ON Semiconductor
MUN2237T1G
ON Semiconductor
NSVMMUN2113LT3G
ON Semiconductor
LCMXO640E-4TN144C
Lattice Semiconductor Corporation
XC3S50A-4VQG100I
Xilinx Inc.
XC3S50-4VQ100I
Xilinx Inc.
APA1000-BGG456I
Microsemi Corporation
M7AFS600-1FG256
Microsemi Corporation
EP4SGX230KF40C2N
Intel
5SGSMD5H1F35C2LN
Intel
XC4036XL-2HQ208C
Xilinx Inc.
EP4SGX230DF29I3
Intel
10CX085YF672I5G
Intel