casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / FJNS4210RTA
codice articolo del costruttore | FJNS4210RTA |
---|---|
Numero di parte futuro | FT-FJNS4210RTA |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
FJNS4210RTA Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | 200MHz |
Potenza - Max | 300mW |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-226-3, TO-92-3 Short Body |
Pacchetto dispositivo fornitore | TO-92S |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJNS4210RTA Peso | Contattaci |
Numero parte di ricambio | FJNS4210RTA-FT |
FJNS4201RBU
ON Semiconductor
FJNS4202RBU
ON Semiconductor
FJNS4202RTA
ON Semiconductor
FJNS4203RBU
ON Semiconductor
FJNS4204RBU
ON Semiconductor
FJNS4205RBU
ON Semiconductor
FJNS4206RBU
ON Semiconductor
FJNS4207RBU
ON Semiconductor
FJNS4208RBU
ON Semiconductor
FJNS4209RBU
ON Semiconductor
A42MX36-3BG272
Microsemi Corporation
AFS1500-1FG484I
Microsemi Corporation
EP1K10TC100-2
Intel
XC7V585T-1FFG1761I
Xilinx Inc.
XC7K325T-2FB676I
Xilinx Inc.
APA600-FGG676I
Microsemi Corporation
LFE2M20E-6FN484I
Lattice Semiconductor Corporation
LCMXO256C-4M100C
Lattice Semiconductor Corporation
LCMXO2-4000HE-4MG132I
Lattice Semiconductor Corporation
10AX016E4F29E3SG
Intel