casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / FJN4313RTA
codice articolo del costruttore | FJN4313RTA |
---|---|
Numero di parte futuro | FT-FJN4313RTA |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
FJN4313RTA Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | PNP - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | 200MHz |
Potenza - Max | 300mW |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Pacchetto dispositivo fornitore | TO-92-3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJN4313RTA Peso | Contattaci |
Numero parte di ricambio | FJN4313RTA-FT |
FJN4303RBU
ON Semiconductor
FJN4304RBU
ON Semiconductor
FJN4305RBU
ON Semiconductor
FJN4306RBU
ON Semiconductor
FJN4307RBU
ON Semiconductor
FJN4308RBU
ON Semiconductor
FJN4309RBU
ON Semiconductor
FJN4310RBU
ON Semiconductor
FJN4311RBU
ON Semiconductor
FJN4312RBU
ON Semiconductor
XCV600E-7FG676C
Xilinx Inc.
LFE2-20SE-5Q208I
Lattice Semiconductor Corporation
M1AGL600V2-FG484
Microsemi Corporation
U1AFS250-FG256I
Microsemi Corporation
LFE3-35EA-9FTN256I
Lattice Semiconductor Corporation
AT6005-4AI
Microchip Technology
5SGXEA7N3F40I4N
Intel
EP3SL340F1517I4LN
Intel
XC5VLX330-1FF1760C
Xilinx Inc.
LFXP2-5E-6M132C
Lattice Semiconductor Corporation