casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Single, Pre-Biased / FJN3310RTA
codice articolo del costruttore | FJN3310RTA |
---|---|
Numero di parte futuro | FT-FJN3310RTA |
SPQ / MOQ | Contattaci |
Materiale di imballaggio | Reel/Tray/Tube/Others |
serie | - |
FJN3310RTA Stato (ciclo di vita) | Disponibile |
Stato parte | Obsolete |
Transistor Type | NPN - Pre-Biased |
Corrente - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Corrente - Limite del collettore (max) | 100nA (ICBO) |
Frequenza - Transizione | 250MHz |
Potenza - Max | 300mW |
Tipo di montaggio | Through Hole |
Pacchetto / caso | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Pacchetto dispositivo fornitore | TO-92-3 |
Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJN3310RTA Peso | Contattaci |
Numero parte di ricambio | FJN3310RTA-FT |
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