casa / prodotti / Prodotti semiconduttori discreti / Transistor - Bipolar (BJT) - Array, pre-polarizzat / EMH60T2R

| codice articolo del costruttore | EMH60T2R |
|---|---|
| Numero di parte futuro | FT-EMH60T2R |
| SPQ / MOQ | Contattaci |
| Materiale di imballaggio | Reel/Tray/Tube/Others |
| serie | - |
| EMH60T2R Stato (ciclo di vita) | Disponibile |
| Stato parte | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Corrente - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
| Corrente - Limite del collettore (max) | 500nA |
| Frequenza - Transizione | 250MHz |
| Potenza - Max | 150mW |
| Tipo di montaggio | Surface Mount |
| Pacchetto / caso | SOT-563, SOT-666 |
| Pacchetto dispositivo fornitore | EMT6 |
| Paese d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
| EMH60T2R Peso | Contattaci |
| Numero parte di ricambio | EMH60T2R-FT |

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